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1 article(s) from Wolkow, Robert

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

Jeremiah Croshaw,
Thomas Dienel,
Taleana Huff and
Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

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Figure 1: Surface of H-terminated Si(100)-2 × 1 in different imaging modes. (a,b) Top and isometric projectio...

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Figure 2: Common features of the H–Si(100)-2 × 1 surface imaged using the indicated STM and nc-AFM imaging mo...

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Figure 3: Analysis of defects using dark-contrast AFM and profile extractions. Line cuts of the AFM scans usi...

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Figure 4: Silicon vacancies at different lattice sites. (a–d), (e–h), and (i–l) show the changing STM appeara...

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Figure 5: Tip-induced removal of hydrogen atoms decorating neutral point defects. (a–c), (d–f), and (g–i) sho...

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Published 07 Sep 2020

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